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In undoped lead zirconate titanate films of 1–2  μm thick, domain walls move in clusters with a correlation length of approximately 0.5–2  μm. Band excitation piezoresponse force microscopy mapping of the piezoelectric nonlinearity revealed that niobium (Nb) doping increases the average concentration or mobility of domain walls without changing the cluster area of correlated domain wall motion. In contrast, manganese (Mn) doping reduces the contribution of mobile domain walls to the dielectric and piezoelectric responses without changing the cluster area for correlated motion. In both Nb and Mn doped films, the cluster area increases and the cluster density drops as the film thickness increases from 250 to 1250 nm. This is evident in spatial maps generated from the analysis of irreversible to reversible ratios of the Rayleigh coefficients. 

Crack initiation stresses for different lead zirconate titanate (PZT) film compositions were investigated. PZT/Pt/TiO2/SiO2/Si stacks with 2.0 μm thick {100} oriented PZT films at the morphotropic phase boundary (MPB) showed a characteristic strength of 1137 MPa, and the film thickness served as the limiting flaw size for failure of the film/substrate stack. In contrast, for Zr/Ti ratios of 40/60 and 30/70, the characteristic stack strength increased while the Weibull modulus decreased to values typical for that of Si. This difference is believed to be due to toughening from ferroelasticity or phase switching. X-ray diffraction showed that the volume fraction of c-domains increased in Ti-rich compositions. This would allow for more switching from c to a-domains under biaxial tensile stress. Zr/Ti concentration gradients were present for all compositions, which contributed to the observation of a rhombohedral phase off the MPB. Due to the reduced tendency toward cracking, off-MPB compositions are potentially of interest in actuators, albeit with the trade-off of needing a high actuation voltage.

 

The receive sensitivity of lead zirconate titanate (PZT) piezoelectric micromachined ultrasound transducers (PMUTs) was improved by applying a DC bias during operation. The PMUT receive sensitivity is governed by the voltage piezoelectric coefficient, h31,f. With applied DC biases (up to 15 V) on a 2 μm PbZr0.52Ti0.48O3 film, e31,f increased 1.6 times, permittivity decreased by a factor of 0.6, and the voltage coefficient increased by ~2.5 times. For released PMUT devices, the ultrasound receive sensitivity improved by 2.5 times and the photoacoustic signal improved 1.9 times with 15 V applied DC bias. B-mode photoacoustic imaging experiments showed that with DC bias, the PMUT received clearer photoacoustic signals from pencil leads at 4.3 cm, compared to 3.7 cm without DC bias.